Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.
نویسندگان
چکیده
An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.
منابع مشابه
Investigating electron depletion effect in amorphous indium–gallium–zinc-oxide thin-film transistor with a floating capping metal by technology computer-aid design simulation and leakage reduction
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عنوان ژورنال:
- Advanced materials
دوره 24 26 شماره
صفحات -
تاریخ انتشار 2012