Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

نویسندگان

  • Hsiao-Wen Zan
  • Chun-Cheng Yeh
  • Hsin-Fei Meng
  • Chuang-Chuang Tsai
  • Liang-Hao Chen
چکیده

An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

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عنوان ژورنال:
  • Advanced materials

دوره 24 26  شماره 

صفحات  -

تاریخ انتشار 2012